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| 3VD186700YL 3VD186700YL HIGH VOLTAGE MOSFET CHIPS DESCRIPTION 3VD186700YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology. Advanced termination scheme to provide enhanced voltage-blocking capability. Avalanche Energy Specified Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode The chips may packaged in TO-251-3L type and the typical equivalent product is 1N70. The packaged product is widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers. Die size: 1.96mm*1.78mm. Chip Thickness: 30020m. Top metal: Al, Backside Metal: Ag. CHIP TOPOGRAPHY ABSOLUTE MAXIMUM RATINGS (Tamb=25C) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Operation Junction Temperature Storage Temperature Symbol VDS VGS ID TJ Tstg Ratings 700 30 1.0 150 -55-150 Unit V V A C C ELECTRICAL CHARACTERISTICS (Tamb=25C) Parameter Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Drain-Source On-Resistance Source-Drain Diode Forward On Voltage Symbol V(BR)DSS Vth(GS) lGSS IDSS RDS(on) VFSD Test conditions VGS = 0V, ID=250A ID=250A ,VDS=VGS VGS=30V, VDS=0V VDS=700V, VGS=0V ID=0.4A, VGS=10V ID=1.0A,VGS=0V Min. 700 2.0 --------Typ. ------------Max. ---4.0 100 1.0 14.5 1.4 Unit V V nA A V HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http: www.silan.com.cn REV:1.0 2008.10.15 Page 1 of 1 |
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